Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb
نویسندگان
چکیده
We study the growth and properties of quaternary-alloy ferromagnetic semiconductor (In0.94−x,Gax,Fe0.06)Sb (x = 5%–30%; Fe concentration is fixed at 6%) grown by low-temperature molecular beam epitaxy. Reflection high-energy electron diffraction patterns, scanning transmission microscopy lattice images, x-ray spectra indicate that layers have a zinc blende crystal structure without any other second phase. The constant films changes linearly with Ga x, indicating atoms substitute In in zinc-blende structure. found carrier type can be systematically controlled varying being n-type when x ≤ 10% p-type ≥ 20%. Characterization studies using magnetic circular dichroism spectroscopy intrinsic ferromagnetism relatively high Curie temperatures (TC 40–120 K). ability to widely control fundamental material (lattice constant, bandgap, type, property) demonstrated this work essential for spintronic device applications.
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2022
ISSN: ['2158-3226']
DOI: https://doi.org/10.1063/5.0069282